期刊
NANO LETTERS
卷 11, 期 5, 页码 2114-2118出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl200707n
关键词
Resistive switching; nonvolatile memory; nanowires; p-type oxides; redox
类别
资金
- MEST [P31-2008-000-10057-0]
- FIRST program
- SCOPE
- NEXT Project
- Grants-in-Aid for Scientific Research [20111005, 09J06253] Funding Source: KAKEN
Resistive switching (RS) memory effect in metal-oxide-metal junctions is a fascinating phenomenon toward next-generation universal nonvolatile memories. However the lack of understanding the electrical nature of RS has held back the applications. Here we demonstrate the electrical nature of bipolar RS in cobalt oxides, such as the conduction mechanism and the switching location, by utilizing a planar single oxide nanowire device. Experiments utilizing field effect devices and multiprobe measurements have shown that the nanoscale RS in cobalt oxides originates from redox events near the cathode with p-type conduction paths, which is in contrast with the prevailing oxygen vacancy based model.
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