期刊
NANO LETTERS
卷 11, 期 9, 页码 3597-3600出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl201332c
关键词
Graphene; field-effect transistor (FET); ion-sensitive FET (ISFET)
类别
资金
- Swiss Nanoscience Institute (SNI)
- nanotera.ch
- Swiss NSF
- ESF
We observe very small gate-voltage shifts in the transfer characteristic of as-prepared graphene field-effect transistors (GFETs) when the pH of the buffer is changed. This observation is in strong contrast to Si-based ion-sensitive FETs. The low gate-shift of a GFET can be further reduced if the graphene surface is covered with a hydrophobic fluorobenzene layer. If a thin Al-oxide layer is applied instead, the opposite happens. This suggests that clean graphene does not sense the chemical potential of protons. A GFET can therefore be used as a reference electrode in an aqueous electrolyte. Our finding sheds light on the large variety of pH-induced gate shifts that have been published for GFETs in the recent literature.
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