期刊
NANO LETTERS
卷 11, 期 9, 页码 3875-3880出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl2019855
关键词
Epitaxial graphene; hydrogenation; transistor; cutoff frequency; carrier mobility; buffer layer
类别
资金
- Naval Surface Warfare Center Crane [N00164-09-C-GR34]
- National Nanotechnology Infrastructure Network at Penn State
We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001) interface for high frequency applications. Upon successful buffer elimination, carrier mobility increases from an average of 800 cm(2)/(V s) to >2000 cm(2)/(V s). Additionally, graphene transistor current saturation increases from 750 to >1300 mA/mm, and transconductance improves from 175 mS/mm to >400 mS. Finally, we report a 10x improvement in the extrinsic current gain response of graphene transistors with optimal extrinsic current-gain cutoff frequencies of 24 GHz.
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