期刊
NANO LETTERS
卷 11, 期 12, 页码 5401-5407出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl2031037
关键词
Graphene; nitrogen doping; electronic structure; synthesis; triazine; ARPES
类别
资金
- RFBR
- SPbSU
- G-RISC
- German Federal Foreign Office via the DAAD
- DFG [GR 3708/1-1, VY64/1-1]
- APART from Austrian Academy of Sciences
A novel strategy for efficient growth of nitrogen-doped graphene (N-graphene) on a large scale from s-triazine molecules is presented. The growth process has been unveiled in situ using time-dependent photoemission. It has been established that a postannealing of N-graphene after gold intercalation causes a conversion of the N environment from pyridinic to graphitic, allowing to obtain more than 8096 of all embedded nitrogen in graphitic form, which is essential for the electron doping in graphene. A band gap, a doping level of 300 meV, and a charge-carrier concentration of similar to 8 x 10(12) electrons per cm 2, induced by 0.4 atom % of graphitic nitrogen, have been detected by angle-resolved photoeinission spectroscopy, which offers great promise for implementation of this system in next generation electronic devices.
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