期刊
NANO LETTERS
卷 11, 期 10, 页码 4134-4137出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl2019068
关键词
graphene; p-n junction; photo-detection; thermoelectricity
类别
资金
- NSF/NRI INDEX
- ONR
- Alexander von Humboldt foundation
- Fundacio Cellex Barcelona
We study photodetection in graphene near a local electrostatic gate, which enables active control of the potential landscape and carrier polarity. We find that a strong photoresponse only appears when and where a p-n junction is formed, allowing on-off control of photodetection. Photocurrents generated near p-n junctions do not require biasing and can be realized using submicrometer gates. Locally modulated photoresponse enables a new range of applications for graphene-based photodetectors including, for example, pixilated infrared imaging with control of response on subwavelength dimensions.
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