期刊
NANO LETTERS
卷 11, 期 10, 页码 4144-4148出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl201980p
关键词
Graphene; Chemical vapor deposition; Seed; Copper; Wrinkle
类别
资金
- STAR-faculty program [2010-0029653]
- WCU (World Class University) [R31-2008-10029]
- NRF [2010-00429]
- MEST of Korea
We report that highly crystalline graphene can be obtained from well-controlled surface morphology of the copper substrate. Flat copper surface was prepared by using a chemical mechanical polishing method. At early growth stage, the density of graphene nucleation seeds from polished Cu film was much lower and the domain sizes of graphene flakes were larger than those from unpolished Cu film. At later growth stage, these domains were stitched together to form monolayer graphene, where the orientation of each domain crystal was unexpectedly not much different from each other. We also found that grain boundaries and intentionally formed scratched area play an important role for nucleation seeds. Although the best monolayer graphene was grown from polished Cu with a low sheet resistance of 260 Omega/sq, a small portion of multilayers were also formed near the impurity particles or locally protruded parts.
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