期刊
NANO LETTERS
卷 11, 期 12, 页码 5259-5263出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl202708d
关键词
Nanowire; nanopillar; high aspect ratio; GaAs; MacEtch; metal-assisted chemical etching
类别
资金
- DOE Division of Materials Science through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign [DEFG02-07ER46471]
- NSF [0749028]
Periodic high aspect ratio GaAs nanopillars with widths in the range of 500-1000 nm are produced by metal-assisted chemical etching (MacEtch) using n-type (100) GaAs substrates and Au catalyst films patterned with soft lithography. Depending on the etchant concentration and etching temperature, GaAs nanowires with either vertical or undulating sidewalls are formed with an etch rate of 1-2 mu m/min. The realization of high aspect ratio III-V nanostructure arrays by wet etching can potentially transform the fabrication of a variety of optoelectronic device structures including distributed Bragg reflector (DBR) and distributed feedback (DFB) semiconductor lasers, where the surface grating is currently fabricated by dry etching.
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