期刊
NANO LETTERS
卷 11, 期 7, 页码 2849-2855出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl201262f
关键词
Block copolymer; triblock terpolymer; self-assembly; templated self-assembly; square pattern; nanolithography
类别
资金
- National Science Foundation
- Semiconductor Research Corporation
- UCLA FENA Center
- Office of Naval Research
- EPSRC
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1007760] Funding Source: National Science Foundation
Square-symmetry patterns are of interest in nanolithography but are not easily obtained from self-assembly of a diblock copolymer. Instead, we demonstrate highly ordered 44 nm period square patterns formed in a thin film of polyisoprene-block-polystyrene-block-polyferrocenylsilane (PI-b-PS-b-PFS) triblock terpolymer blended with 15% PS homopolymer by controlling the flint thickness, solvent anneal conditions, the surface chemistry and topography of the substrates. The square patterns consist of PFS pillars that remained after removal of the PI and PS with an oxygen plasma. On an unpatterned smooth substrate, the average grain size of the square pattern was increased dramatically to several micrometers by the use of brush layers and specific solvent anneal conditions. Templated self-assembly of well-ordered square patterns was demonstrated on substrates containing nanoscale topographical sidewalls and posts, written by electron beam lithography, in which the sidewalls and base of the substrate were independently chemically functionalized.
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