4.8 Article

Aryl Functionalization as a Route to Band Gap Engineering in Single Layer Graphene Devices

期刊

NANO LETTERS
卷 11, 期 10, 页码 4047-4051

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl200803q

关键词

Graphene; aryl group grafting; functonalization; band gap engineering; variable range hopping

资金

  1. ONR/DMEA [H94003-10-2-1003]
  2. NSF [CAREER DMR/0748910]
  3. ONR [N00014-09-1-0724]
  4. NSF-MRSEC [DMR-0820382]
  5. FENA Focus Center

向作者/读者索取更多资源

Chemical functionalization is a promising route to band gap engineering of graphene. We chemically grafted nitrophenyl groups onto exfoliated single-layer graphene sheets in the form of substrate-supported or free-standing films. Our transport measurements demonstrate that nonsuspended functionalized graphene behaves as a granular metal, with variable range hopping transport and a mobility gap similar to 0.1 eV at low temperature. For suspended graphene that allows functionaliza-tion on both surfaces, we demonstrate tuning of its electronic properties from a granular metal to a semiconductor in which transport occurs via thermal activation over a transport gap similar to 80 meV from 4 to 300 K. This noninvasive and scalable functionalization technique paves the way for CMOS-compatible band gap engineering of graphene electronic devices.

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