期刊
NANO LETTERS
卷 11, 期 4, 页码 1782-1785出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl200371z
关键词
Single-walled carbon nanotube; tunable diode; backward diode; band-to-band tunneling
类别
资金
- U-M/SJTU Collaborative Research Program in Renewable Energy Science and Technology
- National Science Foundation
We demonstrate a fully tunable diode structure utilizing a fully suspended single-walled carbon nanotube. The diode's turn on voltage under forward bias can be continuously tuned up to 4.3 V by controlling gate voltages, which is similar to 6 times the nanotube band gap energy. Furthermore, the same device design can be configured into a backward diode by tuning the band-to-band tunneling current with gate voltages. A nanotube backward diode is demonstrated for the first time with non-linearity exceeding the ideal diode. These results suggest that a tunable nanotube diode can be a unique building block for developing next generation programmable nanoelectronic logic and integrated circuits.
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