4.8 Article

Stretchable Graphene Transistors with Printed Dielectrics and Gate Electrodes

期刊

NANO LETTERS
卷 11, 期 11, 页码 4642-4646

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl202134z

关键词

Graphene transistor; stretchable devices; ion gel gate dielectric; printing process; low-voltage operation

资金

  1. National Research Foundation of Korea (NRF)
  2. Ministry of Education, Science and Technology [2009-0082608, 2011-0003149, 2011-0006268]
  3. Korea Ministry of Knowledge Economy [10033309]
  4. National Research Foundation of Korea [2009-0082608] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

With the emergence of human interface technology, the development of new applications based on stretchable electronics such as conformal biosensors and rollable displays are required. However, the difficulty in developing semiconducting materials with high stretchability required for such applications has restricted the range of applications of stretchable electronics. Here, we present stretchable, printable, and transparent transistors composed of monolithically patterned graphene films. This material offers excellent mechanical, electrical, and optical properties, capable of use as semiconducting channels as well as the source/drain electrodes. Such monolithic graphene transistors show hole and electron mobilities of 1188 +/- 136 and 422 +/- 52 cm(2)/(Vs), respectively, with stable operation at stretching up to 5% even after 1000 or more cycles.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据