期刊
NANO LETTERS
卷 12, 期 1, 页码 469-472出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl203851g
关键词
Bismuth selenide; topological insulator; quantum dot; single electron transistor; Coulomb blockade
类别
资金
- UMD-NSF-MRSEC [DMR-05-20471]
- NSF [DMR-11-05224]
- CNAM
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1105224] Funding Source: National Science Foundation
Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2-4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy > 5 meV and additional features implying excited states.
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