期刊
NANO LETTERS
卷 11, 期 9, 页码 3601-3607出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl201358y
关键词
Graphene; epitaxial graphene; gate dielectric; atomic layer deposition; physical vapor deposition; Al2O3; HfO2; SiO2; field effect transistor
类别
资金
- II-VI Foundation
- National Nanotechnology Infrastructure Network at Penn State
- Naval Surface Warfare Center Crane [N00164-09-C-GR34]
We explore the effect of high-kappa dielectric seed layer and overlayer on carrier transport in epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic layer deposition that utilizes direct deposition of high-kappa seed layers and can lead to an increase in Hall mobility up to 70% from as-grown. Additionally, high-kappa seeded dielectrics are shown to produce superior transistor performance relative to low-kappa seeded dielectrics and the presence of heterogeneous seed/overlayer structures is found to be detrimental to transistor performance, reducing effective mobility by 30-40%. The direct deposition of high-purity oxide seed represents the first robust method for the deposition of uniform atomic layer deposited dielectrics on epitaxial graphene that improves carrier transport.
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