期刊
NANO LETTERS
卷 11, 期 11, 页码 4591-4596出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl201867v
关键词
Three-dimensional photonic crystal; nanophotonics; gallium nitride; logpile; Electron Beam Lithography
类别
资金
- Sandia's Solid-State-Lighting Science Energy Frontier Research Center
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
We demonstrate a nine-layer logpile three-dimensional photonic crystal (3DPC) composed of single crystalline gallium nitride (GaN) nanorods, similar to 100 nm in size with lattize constants of 260, 280, and 300 nm with photonic band gap in the visible region. This unique GaN structure is created through a combined approach of a layer-by-layer template fabrication technique and selective metal organic chemical vapor deposition (MOCVD). These GaN 3DPC exhibit a stacking direction band gap characterized by strong optical reflectance between 380 and 500 nm. By introducing a line-defect cavity in the fifth (middle) layer of the 3DPC, a localized transmission mode with a quality factor of 25-30 is also observed within the photonic band gap. The realization of a group III nitride 3DPC with uniform features and a band gap at wavelengths in the visible region is an important step toward realizing complete control of the electromagnetic environment for group III nitride based optoelectronic devices.
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