期刊
NANO LETTERS
卷 11, 期 3, 页码 1161-1165出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl104087u
关键词
Electric dipoles; nanodielectrics; self-assembled monolayers; organic field-effect transistors; n-channel transistors
类别
资金
- Office of Naval Research [N000140810654]
- Air Force Office of Scientific Research [FA9950-09-1-0256]
- Kwanjeong Education foundation
- Eastman Kodak Corporation
- National Science Foundation
We present a new method to manipulate the channel charge density of field-effect transistors using dipole-generating self-assembled monolayers (SAMs) with different anchor groups. Our approach maintains an ideal interface between the dipole layers and the semiconductor while changing the built-in electric potential by 0.41-0.50 V. This potential difference can be used to change effectively the electrical properties of nanoelectronic devices. We further demonstrate the application of the SAM dipoles to enable air-stable operation of n-channel organic transistors.
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