4.8 Article

Emerging Photoluminescence in Monolayer MoS2

期刊

NANO LETTERS
卷 10, 期 4, 页码 1271-1275

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl903868w

关键词

Photoluminescence; two-dimensional materials; metal dichalcogenide

资金

  1. National Science Foundation
  2. Sloan fellowship
  3. DOE-BES [DE-FG02-06ER46262]
  4. Miller fellowship
  5. Scuola Galileiana di Studi Superiori di Padova
  6. EAR

向作者/读者索取更多资源

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS2, a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS2 crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS2 provides new opportunities for engineering the electronic structure of matter at the nanoscale.

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