期刊
NANO LETTERS
卷 10, 期 4, 页码 1271-1275出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl903868w
关键词
Photoluminescence; two-dimensional materials; metal dichalcogenide
类别
资金
- National Science Foundation
- Sloan fellowship
- DOE-BES [DE-FG02-06ER46262]
- Miller fellowship
- Scuola Galileiana di Studi Superiori di Padova
- EAR
Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS2, a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS2 crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS2 provides new opportunities for engineering the electronic structure of matter at the nanoscale.
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