4.8 Article

Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition

期刊

NANO LETTERS
卷 10, 期 5, 页码 1645-1651

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl9041966

关键词

Thermal conductivity; thermal interface resistance; graphene; Raman; measurement

资金

  1. University of Texas at Austin
  2. Texas Nanotechnology Research Superiority Initiative (TNRSI)/SWAN
  3. Office of Naval Research [N00014-08-1-1168, N00014-10-1-0581]
  4. Department of Energy Office of Science [DE-FG02-07ER46377]
  5. National Science Foundation [CBET-0553649]

向作者/读者索取更多资源

Graphene monolayer has been grown by chemical vapor deposition on copper and then suspended over a hole. By measuring the laser heating and monitoring the Raman G peak, we obtain room-temperature thermal conductivity and interface conductance of (370 + 650/-320) W/m K and (28 + 16/-9.2) MW/m(2) K For the supported graphene. The thermal conductivity of the suspended graphene exceeds (2500 + 1100/-1050) W/m K near 350 K and becomes (1400 + 500/-480) W/m K at about 500 K.

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