期刊
NANO LETTERS
卷 10, 期 8, 页码 2884-2890出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl1009662
关键词
Flexible memory; organic electronics; metallic nanoparticles; charge trapping
类别
资金
- Ministry of Education, Science and Technology (MEST) [2008-0059952, 2009-0077593, 2010-0014925, 2010-0015014]
- NRF/MEST [R11-2005-04800000-0]
- MKE/KEIT [10030559]
- World Gold Council [RP05-08]
- National Research Foundation of Korea [2009-0077593, 2008-0060669, 2010-0015014, 2010-0014925, 2008-0059952] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The flexible nonvolatile organic memory devices were developed on the plastic substrates based on the organic thin-film transistors embedding self-assembled gold nanoparticles (Au(NP)). The organic memory devices exhibited good programmable memory characteristics with respect to the program/erase operations, resulting in controllable and reliable threshold voltage shifts. Additionally, the endurance, data retention, and bending cyclic measurements confirmed that the flexible memory devices exhibited good electrical reliability as well as mechanical stability. The memory devices were composed of the solution-processed organic dielectric layers/metallic nanoparticles and the low-temperature processed organic transistors. Therefore, this approach could potentially be applied to advanced flexible/plastic electronic devices as well as integrated organic device circuits.
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