期刊
NANO LETTERS
卷 10, 期 5, 页码 1639-1644出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl9041774
关键词
Nanowire; core-shell; doping; III-V on Si; LED
类别
资金
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan
- Global Center of Excellence (GCOE)
We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.
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