期刊
NANO LETTERS
卷 10, 期 6, 页码 2111-2116出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl1006307
关键词
Active plasmonics; index modulation; transparent conducting oxides; indium tin oxide; electro-optical devices; waveguides
类别
资金
- Office of Basic Energy Sciences, Air Force Office of Scientific Research, DOE [DE-FG02-07ER46405, FA9550-09-1-0673]
- Rothschild Foundation
We report a method for obtaining unity-order refractive index changes in the accumulation layer of a metal-oxide-semiconductor heterostructure with conducting oxide as the active material. Under applied field, carrier concentrations at the dielectric/conducting oxide interface increase from 1 x 10(21)/cm(3) to 2.8 x 10(22)/cm(3), resulting in a local refractive index change of 1.39 at 800 nm. When this structure is modeled as a plasmonic waveguide, the change corresponds to a modal index change of 0.08 for the plasmonic mode,
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