期刊
NANO LETTERS
卷 10, 期 9, 页码 3727-3732出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl102356x
关键词
CdSe nanocrystals; electrical transport; size dependence; thin-film transistors; ion-gel gate dielectric
类别
资金
- National Science Foundation (NSF) [DMR-0819885]
- NSF Materials World Network [DMR-0908629]
- Center for Nanostructure Applications at the University of Minnesota (UMN)
- NSF
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0908629] Funding Source: National Science Foundation
Electrical transport in films of CdSe nanocrystals with diameters varying from 2.9 to 5.1 nm was examined over 233-300 K by employing electrolyte gating to control the electron density. The transport parameters varied strongly and systematically with nanocrystal diameter. First, a strong correlation was observed between the device turn-on voltage and the size-dependent position of the lowest unoccupied electronic states of the nanocrystals. Second, the electron mobility increased with increasing particle diameter and reached a high value of 0.6 cm(2)/(V s) for films with 5.1 nm nanocrystals. Third, the charge transport could be described in terms of the nearest-neighbor-hopping mechanism with a size-dependent activation energy and a pre-exponential factor for mobility. The activation energy can be viewed as a size-dependent charging energy of an individual nanocrystal. Collectively, the combination of size and temperature-dependent measurements provides a powerful approach to understanding electrical transport in nanocrystal films.
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