4.8 Article

Size-Dependent Electrical Transport in CdSe Nanocrystal Thin Films

期刊

NANO LETTERS
卷 10, 期 9, 页码 3727-3732

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl102356x

关键词

CdSe nanocrystals; electrical transport; size dependence; thin-film transistors; ion-gel gate dielectric

资金

  1. National Science Foundation (NSF) [DMR-0819885]
  2. NSF Materials World Network [DMR-0908629]
  3. Center for Nanostructure Applications at the University of Minnesota (UMN)
  4. NSF
  5. Direct For Mathematical & Physical Scien
  6. Division Of Materials Research [0908629] Funding Source: National Science Foundation

向作者/读者索取更多资源

Electrical transport in films of CdSe nanocrystals with diameters varying from 2.9 to 5.1 nm was examined over 233-300 K by employing electrolyte gating to control the electron density. The transport parameters varied strongly and systematically with nanocrystal diameter. First, a strong correlation was observed between the device turn-on voltage and the size-dependent position of the lowest unoccupied electronic states of the nanocrystals. Second, the electron mobility increased with increasing particle diameter and reached a high value of 0.6 cm(2)/(V s) for films with 5.1 nm nanocrystals. Third, the charge transport could be described in terms of the nearest-neighbor-hopping mechanism with a size-dependent activation energy and a pre-exponential factor for mobility. The activation energy can be viewed as a size-dependent charging energy of an individual nanocrystal. Collectively, the combination of size and temperature-dependent measurements provides a powerful approach to understanding electrical transport in nanocrystal films.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据