期刊
SENSORS AND ACTUATORS B-CHEMICAL
卷 207, 期 -, 页码 383-390出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.snb.2014.10.021
关键词
Semiconductor; Ce-doped tin oxide; Thick film; Gas sensor
资金
- University Grants Commission (UGC) [38-02/09 (WRO)]
- DAE-BRNS
- CSIR, India
The undoped SnO2 and 4 wt% Ce-doped SnO2 were successfully synthesized by a facile co-precipitation route. The ternary systems were prepared by Pd-loading (0.5, 1.5 and 3.0 wt%) on the 4 wt% Ce-doped SnO2 nanoparticles. The structure and morphology of the nanocrystalline powders were investigated by X-ray diffraction, scanning electron microscopy and transmission electron microscopy techniques. The nanocrystalline powders were screen printed on the alumina substrates to form thick films to investigate their gas response properties. The gas response studies reveal that 4 wt% Ce-doped SnO2 with the loading of 3.0 wt% Pd exhibits high response (88%) towards ethanol (100 ppm) at an operating temperature of 250 degrees C with quick response (6 s) and rapid recovery (20 s). The high ethanol vapor response at lower operating temperature of this sensor is attributed to the spill-over mechanism of Pd particles present on the SnO2 surface and enhancement in alkalescence of SnO2 due to Ce-doping. (C) 2014 Elsevier B.V. All rights reserved.
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