期刊
NANO LETTERS
卷 10, 期 6, 页码 2268-2274出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl100892y
关键词
Nanowire; nanowire sensor; field-effect transistor; ion-sensitive field effect; pH-sensing; electric conductance
类别
资金
- Sensirion AG
- Swiss Nanoscience Institute (SNI)
- Swiss NanoTera program
Field effect transistors (FETs) are widely used for the label-free detection of analytes in chemical and biological experiments. Here we demonstrate that the apparent sensitivity of a dual-gated silicon nanowire FET to pH can go beyond the Nernst limit of 60 mV/pH at room temperature. This result can be explained by a simple capacitance model including all gates. The consistent and reproducible results build to a great extent on the hysteresis- and leakage-free operation. The dual-gate approach can be used to enhance small signals that are typical for bio- and chemical sensing at the nanoscale.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据