期刊
NANO LETTERS
卷 10, 期 8, 页码 3168-3172出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl102066q
关键词
Single spin; quantum computation; spintronics; nitrogen vacancy; diamond; ion implantation
类别
资金
- AFOSR
- ARC
- DARPA
- US Department of Energy [DEAC0205CH11231]
We demonstrate a technique to nanofabricate nitrogen vacancy (NV) centers in diamond based on broad-beam nitrogen implantation through apertures in electron beam lithography resist. This method enables high-throughput nanofabrication of single NV centers on sub-100-nm length scales. Secondary ion mass spectroscopy measurements facilitate depth profiling of the implanted nitrogen to provide three-dimensional characterization of the NV center spatial distribution. Measurements of NV center coherence with on-chip coplanar waveguides suggest a pathway for incorporating this scalable nanofabrication technique in future quantum applications.
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