期刊
NANO LETTERS
卷 10, 期 2, 页码 520-523出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl903366z
关键词
Black germanium; nanowires; nanoneedles; antireflective coating; thin absorbers
类别
资金
- MARCO/MSD
- Intel Corporation
- NSF COINS
- Berkeley Sensor and Actuator Center
- Lawrence Berkeley National Laboratory
- NDSEG
Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (similar to 4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties, Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (similar to 75 degrees) and for relatively short nanoneedle lengths (-1 mu m). Furthermore, the. material exhibits high optical absorption efficiency with an effective band gap of similar to 1 eV. The reported black Ge could potentially have important practical implications For efficient photovoltaic and photodetector applications on nonconventional substrates.
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