期刊
NANO LETTERS
卷 10, 期 11, 页码 4521-4525出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl102459t
关键词
Bilayer graphene; tunable hand gap; Corbino disk; edge transport
类别
资金
- U.S. ONR MURI
- NSF-UMD-MRSEC [DMR 05-20471]
- NRI-MRSEC
The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a two-channel conductance model including parallel thermal activation and variable range hopping channels, which gives the electric-field-dependent band gap whose magnitude is found to be in good agreement with infrared absorption experiments. Low-temperature transport is similar to that seen in previous studies of dual-gated bilayer graphene with edges, suggesting that edge transport does not play an important role.
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