Resistive Switches and Memories from Silicon Oxide

Because of its excellent dielectric properties. silicon oxide (SiOx) has long been used and considered as a passive, insulating component in the construction of electronic devices In contrast, here we demonstrate resistive switches and memories that use SiOx as the sole active material and can be implemented in entirely metal-free embodiments Through cross-sectional transmission electron microscopy, we determine that the switching takes place through the voltage-driven formation and modification of silicon (Si) nanocrystals (NCs) embedded in the SiOx matrix, with SiOx itself also serving as the source of the formation of this Si pathway The small sizes of the Si NCs (d similar to 5 nm) suggest that scaling to ultrasmall domains could be feasible Meanwhile, the switch also shows robust nonvolatile properties, high ON/OFF ratios (> 10(5)), fast switching (sub-100-ns), and good endurance (10(4) write-erase cycles) These properties in a SiOx-based material composition showcase its potentials in constructing memory or logic devices that are fully CMOS compatible