4.8 Article

Direct Chemical Vapor Deposition of Graphene on Dielectric Surfaces

期刊

NANO LETTERS
卷 10, 期 5, 页码 1542-1548

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl9037714

关键词

Graphene; CVD; nanoelectronics

资金

  1. Office of Science, Office of Basic Energy Sciences, of the U.S. Department of Energy [DE-AC02-05CH11231]
  2. MSD Focus Center
  3. Focus Center Research Program
  4. Semiconductor Research Corporation program

向作者/读者索取更多资源

Direct deposition of graphene on various dielectric substrates is demonstrated using a single-step chemical vapor deposition process. Single-layer graphene is formed through surface catalytic decomposition of hydrocarbon precursors on thin copper films precleposited on dielectric substrates. The copper films dewet and evaporate during or immediately after graphene growth, resulting in graphene deposition directly on the bare dielectric substrates. Scanning Raman mapping and spectroscopy, scanning electron microscopy, and atomic force microscopy confirm the presence of continuous graphene layers on tens of micrometer square metal-free areas. The revealed growth mechanism opens new opportunities for deposition of higher quality graphene films on dielectric materials.

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