Germanium and Silicon Nanocrystal Thin-Film Field-Effect Transistors from Solution

Germanium and silicon have lagged behind more popular II-VI and IV-VI semiconductor materials in the emerging. field of semiconductor nanocrystal thin film devices We report germanium and silicon nanocrystal field-effect transistors fabricated by synthesizing nanocrystals in a plasma, transferring them into solution, and casting thin films Germanium devices show n-type, ambipolar, or p-type behavior depending on annealing temperature with electron and hole mobilities as large as 0 02 and 0 006 cm(2) V-1 s(-1). respectively Silicon devices exhibit n-type behavior without any postdeposition treatment, but are plagued by poor film morphology