期刊
NANO LETTERS
卷 10, 期 4, 页码 1219-1223出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl9036406
关键词
Multiferroic; magnetoelectric; domain wall; Lorentz; in situ
类别
资金
- NSF MRSEC [DMR 0520471]
- ONR-MURI [N000140610530]
- ARO [W911NF-07-1-0410]
- NEDO
We report direct observation of controlled and reversible switching of magnetic domains using static (dc) electric fields applied in situ during Lorentz microscopy. The switching is realized through electromechanical coupling in thin film Fe0.7Ga0.3/BaTiO3 bilayer structures mechanically released from the growth substrate. The domain wall motion is observed dynamically, allowing the direct association of local magnetic ordering throughout a range of applied electric fields. During application of similar to 7-11 MV/m electric fields to the piezoelectric BaTiO3 film, local magnetic domains rearrange in the ferromagnetic Fe0 7Ga0 3 layer due to the transfer of strain from the BaTiO3 film. A simulation based on micromagnetic modeling shows a magnetostrictive anisotropy of 25 kPa induced in the Fe0.7Ga0.3 due to the strain. This electric-field-dependent uniaxial anisotropy is proposed as a possible mechanism to control the coercive held during operation of an integrated rnagnetoelectric memory node.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据