期刊
NANO LETTERS
卷 10, 期 9, 页码 3572-3576出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl101832y
关键词
graphene; silicon nitride; mobility; band gap; band overlap; PECVD
类别
资金
- DARPA [FA8650-08-C-7838]
We show that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. This insulator allowed us to study the maximum channel resistance at the Dirac (neutrality) point as a function of the strength of a perpendicular electric field in top-gated devices with different numbers of graphene layers. Using a simple model to account for surface potential variations (electron-hole puddles) near the Dirac Point we estimate the held-induced band gap or band overlap in the different layers.
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