期刊
NANO LETTERS
卷 10, 期 8, 页码 3209-3215出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl1022139
关键词
Boron nitride; electrical microscopy; optical and mechanical properties; computation
类别
资金
- Rice University
- Naval Research (ONR)
- Basic Energy Sciences division of the Department of Energy (DOE)
- DOE-BES [DE-SC0001479]
- ONR [N00014-09-1-1066]
- International Balzan Foundation through MO University
- Chinese State Scholarship fund
- NSF [ECCS-0702766]
- Welch Foundation [C-1716]
- DOE [DE-FG02-09ER46598]
- U.S. Department of Energy (DOE) [DE-SC0001479] Funding Source: U.S. Department of Energy (DOE)
Hexagonal boron nitride (h-BN), a layered material similar to graphite, is a promising dielectric. Monolayer h-BN, so-called white graphene, has been isolated from bulk BN and could be useful as a complementary two-dimensional dielectric substrate for graphene electronics. Here we report the large area synthesis of h-BN Films consisting of two to five atomic layers, using chemical vapor deposition. These atomic films show a large optical energy band gap of 5.5 eV and are highly transparent over a broad wavelength range. The mechanical properties of the h-BN films, measured by nanoincientation, show 2D elastic modulus in the range of 200-500 N/m, which is corroborated by corresponding theoretical calculations.
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