期刊
NANO LETTERS
卷 10, 期 5, 页码 1917-1921出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl100840z
关键词
Nanoelectronics; graphene nanoribbon; core-shell nanowire; transistor; transconductance
类别
资金
- National Science Foundation [0956171]
- Direct For Mathematical & Physical Scien [0956171] Funding Source: National Science Foundation
- Division Of Materials Research [0956171] Funding Source: National Science Foundation
The integration ultrathin high dielectric constant (high-k) materials with graphene nanoribbons (GNRs) for top-gated transistors can push their performance limit for nanoscale electronics. Here we report the assembly of Si/HfO2 core/shell nanowires on top of individual GNRs as the top-gates for GNR held-effect transistors with ultrathin high-k dielectrics. The Si/HfO2 core/shell nanowires are synthesized by atomic layer deposition of the HfO2 shell on highly doped silicon nanowires with a precise control of the dielectric thickness down to 1-2 nm. Using the core/shell nanowires as the top-gates, high-performance GNR transistors have been achieved with transconductance reaching 3.2 mS mu m(-1). the highest value for GNR transistors reported to date. This method, for the first time, demonstrates the effective integration of ultrathin high-k dielectrics with graphene with precisely controlled thickness and quality, representing an important step toward high-performance graphene electronics.
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