4.8 Article

Paired Twins and {11(2)over-bar} Morphology in GaP Nanowires

期刊

NANO LETTERS
卷 10, 期 7, 页码 2349-2356

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl1000136

关键词

Nanowire; VLS; twin plain; twinning; pair; GaP

资金

  1. Materials Innovation Institute (M2i)
  2. Netherlands Institute of Metals Research
  3. FP6 [015783]
  4. Ministry of Economic Affairs in The Netherlands (NanoNed)
  5. European Marie Curie program

向作者/读者索取更多资源

Formation of random as well as periodic planar defects can occur during vapor liquid solid growth of nanowires with the zinc-blende crystal structure Here we investigate the formation of pairs of twin planes in GaP nanowires In such pairs, the first twin plane is formed at a random position, rapidly followed by the formation of a second twin plane of which the position is directly related to that of the first one We show that the triangular {11 (2) over bar} morphology of the nanowire is a key element in the formation of these twin pairs We have extended our previous kinetic nucleation model and show that this describes the development of the nanowire morphology and its relation with the formation of single and paired twin planes

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