On Resonant Scatterers As a Factor Limiting Carrier Mobility in Graphene

We show chat graphene deposited on a substrate has a non-negligible density of atomic scale defects This is evidenced by a previously unnoticed D peak in the Raman spectra with intensity of similar to 1 % with respect to the G peak We evaluated the effect of such impurities on electron transport by mimicking them with hydrogen adsorbates and measuring the induced changes in both mobility and Raman intensity If the intervalley scatterers responsible for the D peak are monovalent, their concentration is sufficient to account for the limited mobilities currently achievable in graphene on a substrate