期刊
NANO LETTERS
卷 10, 期 12, 页码 4975-4980出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl103079j
关键词
Graphene N doping; NH3 annealing; ion irradiation; Raman spectroscopy; field effect transistor
类别
资金
- Major National Basic Research Development Programs [2009CB930200, 2011CB933401]
- Special Presidential Foundation of Chinese Academy of Sciences [09312911ZX]
- National Natural Science Foundations of China [Y0191111JJ 21005023]
Opening and tuning an energy gap in graphene are central to many electronic applications of graphene Here we report N doped graphene obtained by NH3 annealing after N+ ion irradiation of graphene samples First the evolution of the graphene microstucture was investigated following N+ ion irradiation at different fluences using Raman spectroscopy showing that defects were introduced in plane after irradiation and then restored after annealing in N-2 or in NH3 Auger electron spectroscopy (AES) of the graphene annealed in NH3 after irradiation showed N signal however no N signal was observed after annealing in N-2 Last the field effect transistor (FET) was fabricated using N doped graphene and monitored by the source drain conductance and back-gate voltage (G(sd)-V-g) curves in the measurement The transport property changed compared to that of the FET made by intrinsic graphene that is the Dirac point position moved from positive V-g to negative V-g indicating the transition of graphene From p type to n type after annealing in NH3 Our approach which provides a physical mechanism for the introduction of defect and subsequent hetero dopant atoms Into the graphene material in a controllable fashion will be promising for producing graphene based devices for multiple applications
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