期刊
NANO LETTERS
卷 10, 期 10, 页码 4134-4139出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl1023707
关键词
Hexagonal boron nitride; chemical vapor deposition; borazine
类别
资金
- National Science Foundation [NSF DMR 0845358]
- Academia Sinica, National Science Council Taiwan [NSC-99-2112-M-001-021-MY3]
- National Research Foundation in Singapore [NU-CRP-07-2]
- Graphene Approaches to Terahertz Electronics (GATE) MURI [N00014-09-1-1063]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0845358] Funding Source: National Science Foundation
In this contribution we demonstrate a method of synthesizing a hexagonal boron nitride (h-BN) thin him by ambient pressure chemical vapor deposition on polycrystalline Ni films Depending on the growth conditions, the thickness of the obtained h-BN film is between similar to 5 and 50 nm. The h-ON grows continuously on the entire Ni surface and the region with uniform thickness can be up to 20 mu m in lateral size which is only limited by the size of the Ni single crystal grains The hexagonal structure was confirmed by both electron and X-ray diffraction X-ray photoelectron spectroscopy shows the B/N atomic ratio to be 1112 angstrom large optical band gap (5 92 eV) was obtained from the photoabsorpoon spectra which suggest the potential usage of this h-ON film in optoelectronic devices
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