期刊
NANO LETTERS
卷 10, 期 3, 页码 864-868出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl903391x
关键词
Zigzag silicon nanowire; controlled synthesis; semiconductor nanowires
类别
资金
- National Basic Research Program of China (973 Program) [2006CB933000, 2010CB934500]
- National Natural Science Foundation of China [50825304, 50972190]
- Chinese Academy of Sciences [KGCX2-YW-391-2]
Silicon nanowires (SiNWs) having curved structures may have unique advantages in device fabrication. However,, no methods are available to prepare curved SiNWs controllably. in this work, we report the preparation of three types of single-crystal SiNWs with various turning angles via metal-assisted chemical etching using (111)-oriented silicon wafers near room temperature. The zigzag SiNWs are single crystals and can be p- or n-doped using corresponding Si wafer as substrate. The controlled growth direction is attributed to the preferred movement of Ag nanoparticles along < 001 > and other directions in Si wafer. Our results demonstrate that metal-assisted chemical etching may be a viable approach to fabricate SiNWs with desired turning angles by utilizing the various crystalline directions in a Si wafer.
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