4.8 Article

Ultrafast Transient Absorption Microscopy Studies of Carrier Dynamics in Epitaxial Graphene

期刊

NANO LETTERS
卷 10, 期 4, 页码 1308-1313

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nl904106t

关键词

Transient absorption imaging; epitaxial graphene; carrier dynamics; electron-phonon coupling

资金

  1. Office of Basic Energy Science of the U.S. Department of the Energy
  2. National Science Foundation [CHE-0647444, ECCS-0802125, DMR-0856240]
  3. Notre Dame Faculty Research Program
  4. Nanoelectronics Research Initiative
  5. Div Of Electrical, Commun & Cyber Sys
  6. Directorate For Engineering [1530723] Funding Source: National Science Foundation
  7. Div Of Electrical, Commun & Cyber Sys
  8. Directorate For Engineering [0846910] Funding Source: National Science Foundation

向作者/读者索取更多资源

Transient absorption microscopy was employed to image charge carrier dynamics in epitaxial multilayer graphene. The carrier cooling exhibited a biexponential decay that showed a significant dependence on carrier density. The fast and slow relaxation times were assigned to coupling between electrons and optical phonon modes and the hot phonon effect, respectively. The limiting value of the slow relaxation time at high pump intensity reflects the lifetime of the optical phonons. Significant spatial heterogeneity in the dynamics was observed due to differences in coupling between graphene layers and the substrate.

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