期刊
NANO LETTERS
卷 10, 期 4, 页码 1172-1176出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl9034626
关键词
Graphene; electron-phonon coupling; Raman spectroscopy
类别
资金
- Spanish MEC [FIS2007-65702-C02-01]
- Grupos Consolidados UPV/EHU del Gobierno Vasco [IT-319-07]
- European Community [211906]
- French ANR
- Barcelona Supercomputing Center
- SGIker ARINA (UPV/EHU)
- Transnational Access Programme HPC-Europe++
we present a new way to tune the electron phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.
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