期刊
NANO LETTERS
卷 10, 期 6, 页码 2043-2048出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl100136b
关键词
Ge semiconductor; nanowire; photoconductor; internal gain
类别
资金
- NRF [2009-0082853, R01-2008-000-20702-0, 2009-0094037]
- MEST-AFOSR NBIT [K20716000006-07A0400-00610]
- WCU [R31-2008-000-10059-0]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10030559] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Ministry of Education, Science & Technology (MoST), Republic of Korea [R31-2008-000-10059-0, 2007-00212] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [R01-2008-000-20702-0, 2008-0061971, 2007-2002864, 2010-00305] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report a diameter-dependent photoconduction gain in intrinsic Ge nanowire (NW) photodetectors. By employing a scanning photocurrent imaging technique, we provide evidence that the photocarrier transport is governed by the hole drift along the Ge NWs, ensuing the higher internal gain up to similar to 10(3) from the thin NWs. It is found that the magnitudes of both gain and photoconductivity are inversely proportional to the NW diameter ranging from 50 to 300 nm. We attribute our observations to the variation in the effective hole carrier density upon varying diameters of Ge NWs, as a result of field effects from the diameter-dependent population of the surface-trapped electrons, along with a model calculation. Our observations represent inherent size effects of internal gain in semiconductor NWs, thereby provide a new insight into nano-optoelectronics.
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