期刊
NANO LETTERS
卷 10, 期 8, 页码 3052-3056出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl102237n
关键词
Quantum dot; band alignment; optical properties
类别
资金
- DoD (NSSEFF) [N00244-09-1-0091]
- Irish Government
- European Commission [041985]
- Science Foundation Ireland [06/RFP/EWE014, 07/IN.1/1929]
We report the growth of InAs1-xSbx self-assembled quantum dots (QDs) on GaAs (100) by molecular beam epitaxy. The optical properties of the QDs are investigated by photoluminescence (PL) and time-resolved photoluminescence (TRPL). A type I to type II band alignment transition is demonstrated by both power-dependent PL and TRPL in InAs1-xSbx QD samples with increased Sb beam flux. Results are compared to an eight-band strain-dependent k.p model incorporating detailed QD structure and alloy composition. The calculations show that the conduction band offset of InAs1-xSbx/GaAs can be continuously tuned from 0 to 500 meV and a flat conduction band alignment exists when 60% Sb is incorporated into the QDs. Our study offers the possibility of tailoring the band structure of GaAs based InAsSb QDs and opens up new means for device applications.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据