期刊
NANO LETTERS
卷 10, 期 11, 页码 4316-4320出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl1013713
关键词
Semiconductor nanowires; nonvolatile memory; ferroelectric nanoparticles
类别
资金
- European Union [FP7-216777]
- LG Display
We demonstrate a room temperature processed ferroelectric (FE) nonvolatile memory based on a ZnO nanowire (NW) EFT where the NW channel is coated with FE nanoparticles. A single device exhibits excellent memory characteristics with the large modulation in channel conductance between ON and OFF states exceeding 10(4), a long retention time of over 4 x 10(4) s, and multibit memory storage ability. Our findings provide a viable way to create new functional high-density nonvolatile memory devices compatible with simple processing techniques at low temperature for flexible devices made on plastic substrates.
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