期刊
NANO LETTERS
卷 10, 期 8, 页码 2777-2782出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl100662z
关键词
Focused ion beam; silicon; nanowire; galvanic displacement; vapor-liquid-solid; branch
类别
资金
- MIT's Center for Bits and Atoms
- U.S. Army Research Office [W911NF-08-1-0254]
- Samsung Scholarship
Although significant progress has been made in being able to spatially define the position of material layers in vapor liquid solid (VLS) grown nanowires, less work has been carried out in deterministically defining the positions of nanowire branching points to facilitate more complicated structures beyond simple I D wires. Work to date has focused on the growth of randomly branched nanowire structures. Here we develop a means for programmably designating nanowire branching points by means of focused ion beam-defined VLS catalytic points. This technique is repeatable without losing fidelity allowing multiple rounds of branching point definition followed by branch growth resulting in complex structures. The single crystal nature of this approach allows us to describe resulting structures with linear combinations of base vectors in three-dimensional (3D) space. Finally, by etching the resulting 3D defined wire structures branched nanotubes were fabricated with interconnected nanochannels inside. We believe that the techniques developed here should comprise a useful tool for extending linear VLS nanowire growth to generalized 3D wire structures.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据