期刊
NANO LETTERS
卷 10, 期 2, 页码 455-460出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl9031132
关键词
Kondo effects; silicon nanostructures; dopants; quantum transport
类别
资金
- Dutch Foundation for Fundamental Research on Matter (FOM)
- European Unions seventh Framework [FP7 2007/2013, 214989]
The Kondo effect has been observed in a single gate-tunable atom. The measurement device consists of a single As dopant incorporated in a silicon nanostructure. The atomic orbitals of the dopant are tunable by the gate electric field. When they are tuned such that the ground state of the atomic system becomes a (nearly) degenerate superposition of two of the silicon valleys, an exotic and hitherto unobserved valley Kondo effect appears. Together with the regular spin Kondo, the tunable valley Kondo effect allows for reversible electrical control over the symmetry of the Kondo ground state from an SU(2) to an SU(4) configuration.
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