期刊
NANO LETTERS
卷 9, 期 10, 页码 3430-3434出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl901572a
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资金
- DOE [DEFG02-05ER46215, DE-FG02-98ER-14861]
- ONR [N000140610138]
- NSF NSEC [CHE-0117752]
- NYSTAR, FENA MARCO center
- DARPA [FA8650-08-C-7838]
- KOSEF [R11-2008-052-01000]
- National Research Foundation of Korea [2008-0061956, 2009-00029] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report variation of the work function for single and bilayer graphene devices measured by scanning Kelvin probe microscopy (SKPM). By use of the electric field effect, the work function of graphene can be adjusted as the gate voltage tunes the Fermi level across the charge neutrality point, Upon biasing the device, the surface potential map obtained by SKPM provides a reliable way to measure the contact resistance of individual electrodes contacting graphene.
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