期刊
NANO LETTERS
卷 9, 期 5, 页码 1787-1792出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl803698b
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资金
- Alexander von Humboldt Foundation
We have performed a detailed study of the intrinsic electrical conduction process in individual monolayers of chemically reduced graphene oxide down to a temperature of 2 K. The observed conductance can be consistently interpreted in the framework of two-dimensional variable-range hopping in parallel with electric-field-driven tunneling. The latter mechanism is found to dominate the electrical transport at very low temperatures and high electric fields. Our results are consistent with a model of highly conducting graphene regions interspersed with disordered regions, across which charge carrier hopping and tunneling are promoted by strong local electric fields.
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