期刊
NANO LETTERS
卷 9, 期 5, 页码 1866-1871出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl803849e
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资金
- Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-AC02-76SF00515]
- Center for Probing the Nanoscale
- NSF NSEC [PHY-0425897]
- Division Of Physics
- Direct For Mathematical & Physical Scien [GRANTS:13675314] Funding Source: National Science Foundation
- Division Of Physics
- Direct For Mathematical & Physical Scien [0830228] Funding Source: National Science Foundation
Carbon nanotube network field effect transistors (CNTN-FETs) are promising candidates for low cost macroelectronics. We investigate the microscopic transport in these devices using electric force microscopy and simulations. We find that in many CNTN-FETs the voltage drops abruptly at a point in the channel where the current is constricted to just one tube. We also model the effect of varying the semiconducting/metallic tube ratio. The effect of Schottky barriers on both conductance within semiconducting tubes and conductance between semiconducting and metallic tubes results in three possible types of CNTN+ETs with fundamentally different gating mechanisms. We describe this with an electronic phase diagram.
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