期刊
NANO LETTERS
卷 9, 期 8, 页码 2973-2977出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl901396g
关键词
-
类别
资金
- NRI
- Intel
With the motivation of improving the performance and reliability of aggressively scaled nanopatterned graphene field-effect transistors, we present the first systematic experimental study on charge and current distribution in multilayer graphene field-effect transistors. We find a very particular thickness dependence for I-on, I-off, and the I-on/I-off ratio and propose a resistor network model including screening and interlayer coupling to explain the experimental findings. In particular, our model does not invoke modification of the linear energy-band structure of graphene for the multilayer case. Noise reduction in nanoscale few-layer graphene transistors is experimentally demonstrated and can be understood within this model as well.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据