期刊
NANO LETTERS
卷 9, 期 6, 页码 2300-2305出版社
AMER CHEMICAL SOC
DOI: 10.1021/nl9004833
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资金
- Brain Korea 21 Project
- National Research Laboratory Program [R0A-2008-000-20057-0]
- KAIST EEWS [EEWS0903]
- Korea Science and Engineering Foundatin (KOSEF) [R11-2008-058-03002-0]
- Fundamental R&D Program for Core Technology of Materials
- Korean government (MEST NIKE)
- National Research Foundation of Korea [R11-2008-058-03002-0] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate soft graphoepitaxy of block copolymer assembly as a facile, scalable nanolithography for highly ordered sub-30-nm scale features. Various morphologies of hierarchical block copolymer assembly were achieved by means of disposable topographic confinement of photoresist pattern. Unlike usual graphoepitaxy, soft graphoepitaxy generates the functional nanostructures; of metal and semiconductor nanowire arrays without any trace of structure-directing topographic pattern. Our novel approach is potentially advantageous for multilayer overlay processing required for complex device architectures.
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